SI8900EDB Datasheet, PDF (1/5 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

New Product
Si8900EDB
Vishay Siliconix
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_S1S2 (V)
r_S1S2(on) (W)
0.024 @ V_GS = 4.5 V
20
0.026 @ V_GS = 3.7 V
0.034 @ V_GS = 2.5 V
0.040 @ V_GS = 1.8 V
I_S1S2 (A)
7
6.8
5.0
5.5
Bump Side View ^{MICRO FOOTt} Backside View
S₂ 7 6 S₂
FEATURES
D TrenchFETr Power MOSFET
D Ultra-Low r_SS(on)
D ESD Protected: 4000 V
D New MICRO FOOTt Chipscale Packaging Reduces
Footprint Area Profile (0.62 mm) and On-Resistance
Per Footprint Area
APPLICATIONS
D Battery Protection Circuit
- 1-2 Cell Li+/LiP Battery Pack for Portable Devices
S₁
Pin 1 Identifier
S₂ 8 5 S₂
G₁
4 kW
G₂
9
4
G₁
Device Marking:
8900E = P/N Code
xxx = Date/Lot Traceability Code
G₂
4 kW
S₁ 10 3 S₁
S₁ 1 2 S₁
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Source1—Source2 Voltage
Gate-Source Voltage
V_S1S2
V_GS
20
"12
Continuous Source1—Source2 Current (T_J = 150_C)^a
Pulsed Source1—Source2 Current
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Package Reflow Conditions^c
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
VPR
IR/Convection
I_S1S2
I_SM
P_D
T_J, T_stg
7
5.4
5.1
3.9
10
1.8
1
0.9
0.5
-55 to 150
215
220
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot^b
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. The Foot is defined as the top surface of the package.
c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Document Number: 71830
S-21474—Rev. D, 26-Aug-02
Symbol
R_thJA
R_thJF
Typical
55
95
12
Maximum
70
120
15
Unit
_C/W
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