SI8900EDB Datasheet, PDF (3/5 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

New Product
Si8900EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
V_GS = 5 thru 1.5 V
8
8
Transfer Characteristics
6
6
4
1V
2
0
0
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
0.04
0.03
V_GS = 1.8 V
0.02
0.01
V_GS = 2.5 V
V_GS = 3.7 V
V_GS = 4.5 V
4
T_C = 125_C
2
25_C
-55 _C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_S1S2 = 1 A
1.4
1.2
1.0
0.8
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_S1S2 = 1 A
0.04
I_S1S2 = 5 A
0.02
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Document Number: 71830
S-21474—Rev. D, 26-Aug-02
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
Threshold Voltage
0.2
0.1
-0.0
I_S1S2 = 1.1 mA
-0.1
-0.2
-0.3
-0.4
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
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