SI8900EDB Datasheet, PDF (4/5 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

Si8900EDB
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power, Junction-to-Ambient
30
25
20
15
10
5
2
1
Duty Cycle = 0.5
0
0.01
0.1
1
10
100
1000
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 95_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
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4
10^{- 2}
Square Wave Pulse Duration (sec)
10^{- 1}
1
Document Number: 71830
S-21474—Rev. D, 26-Aug-02