SI8900EDB Datasheet, PDF (2/5 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

Si8900EDB
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Source Current
On-State Source Current^a
V_GS(th)
I_GSS
I_S1S2
I_S(on)
Source1—Source2 On-State Resistance^a
r_S1S2(on)
Forward Transconductance^a
g_fs
Dynamic^b
V_SS = V_GS, I_D = 1.1 mA
V_SS = 0 V, V_GS = "4.5 V
V_SS = 0 V, V_GS = "12 V
V_SS = 16 V, V_GS = 0 V
V_SS = 16 V, V_GS = 0 V, T_J = 85_C
V_SS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_SS = 1 A
V_GS = 3.7 V, I_SS = 1 A
V_GS = 2.5 V, I_SS = 1 A
V_GS = 1.8 V, I_SS = 1 A
V_SS = 10 V, I_SS = 1 A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_SS = 10 V, R_L = 10 W
I_SS ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
Min Typ Max Unit
0.45
1.0
V
"4
mA
"10
mA
1
mA
5
5
A
0.020
0.024
0.022
0.026
0.026
0.034
W
0.032
0.040
31
S
3
5
4.5
7
ms
55
85
15
25
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
20
I_GSS @ 25_C (mA)
16
12
8
4
0
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
10,000
1,000
100
10
Gate Current vs. Gate-Source Voltage
T_J = 150_C
1
T_J = 25_C
0.1
0.01
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71830
S-21474—Rev. D, 26-Aug-02