SI8435DB Datasheet, PDF (5/8 Pages) Vaishali Semiconductor – Dual P-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
0.7
12
0.6
0.5
8
0.4
0.3
4
0.2
0.1
0.0
0
- 50 - 25 0 25 50 75 100 125 150
0
T_J - Temperature (°C)
Threshold Voltage
80
8
Si8435DB
Vishay Siliconix
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating**
60
6
40
4
20
2
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Juncion-to-Ambient
100
Limited by RDSon*
10
1
0.1
IDM Limited
P (t) = 10 ms
P (t) = 100 ms
P (t) = 1 s
P (t) = 10 s
DC
0.01
TA = 25 °C
Single Pulse
0.001
0.1
BVDSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
0
0
25
50
75
100
125
150
Case Temperature (°C)
Power Derating
** The power dissipation P_D is based on T_J(max) = 150 °C, using
junction-to-foot thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
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