SI8435DB Datasheet, PDF (1/8 Pages) Vaishali Semiconductor – Dual P-Channel 20-V (D-S) MOSFET

P-Channel 1.5-V (G-S) MOSFET
Si8435DB
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.041 at V_GS = - 4.5 V
0.048 at V_GS = - 2.5 V
- 20
0.058 at V_GS = - 1.8 V
0.075 at V_GS = - 1.5 V
I_D (A)^a
- 10.0
- 9.32
- 8.48
- 7.45
Q_g (Typ.)
22 nC
FEATURES
• TrenchFET^® Power MOSFET
• Ultra Small MICRO FOOT^® Chipscale
Packaging Reduces Footprint Area, Profile
RoHS
COMPLIANT
(0.62 mm) and On-Resistance Per Footprint Area
APPLICATIONS
• Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8435
XXX
S
4
G
1
S
G
Device Marking: 8435
xxx = Date/Lot Traceability Code
Ordering Information: Si8435DB-T1-E1 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±5
T_C = 25 °C
- 10.0
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 8.06
- 6.72^b,c
T_A = 70 °C
- 5.37^b,c
A
Pulsed Drain Current
I_DM
- 15
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 5.21
- 2.31^b,c
T_C = 25 °C
6.25
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
4.0
2.78^b,c
W
T_A = 70 °C
1.78^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Package Reflow Conditions^d
IR/Convection
260
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 73559
S-82119-Rev. D, 08-Sep-08
www.vishay.com
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