SI8435DB Datasheet, PDF (2/8 Pages) Vaishali Semiconductor – Dual P-Channel 20-V (D-S) MOSFET

Si8435DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a,b
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1“ x 1“ FR4 board.
b. Maximum under Steady State conditions is 72 °C/W.
Symbol
R_thJA
R_thJF
Typical
35
16
Maximum
45
20
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = - 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = - 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 5 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V , T_J = 70 °C
On-State Drain Current^a
I_D(on)
V_DS ≤ - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 1 A
Drain-Source On-State
Resistance^a
R_DS(on)
V_GS = - 2.5 V, I_D = - 1 A
V_GS = - 1.8 V, I_D = - 1 A
V_GS = - 1.5 V, I_D = - 1 A
Forward Transconductance^a
g_fs
V_DS = - 10 V, I_D = - 1 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = - 10 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = - 10 V, V_GS = - 5 V, I_D = - 1 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DS = - 16 V, V_GS = - 4.5 V, I_D = - 1 A
V_GS = - 0.1 V, f = 1 MHz
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_g = 1 Ω
Min.
- 20
- 0.35
- 15
Typ.
- 15.5
2.5
0.034
0.040
0.048
0.055
10.5
Max.
Unit
- 1.0
± 100
-1
- 10
0.041
0.048
0.058
0.075
16
V
mV/°C
V
nA
µA
A
Ω
S
1600
265
pF
175
23
35
22
33
nC
3.25
1.95
20
Ω
15
23
29
44
ns
230
345
91
137
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Document Number: 73559
S-82119-Rev. D, 08-Sep-08