SI8435DB Datasheet, PDF (4/8 Pages) Vaishali Semiconductor – Dual P-Channel 20-V (D-S) MOSFET

Si8435DB
Vishay Siliconix
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
0.12
1.6
ID = 1 A
0.10
0.08
0.06
V_GS= 1.5 V
V_GS = 1.8 V
0.04
V_GS = 2.5 V
V_GS = 4.5 V
0.02
0
3
6
9
12
15
2500
I_D - Drain Current (A)
R_DS(on) vs. Drain Current
1.4
V_GS = 4.5 V, 2.5 V
1.2
V_GS = 1.8 V, 1.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction T emperature (°C)
On-Resistance vs. Junction Temperature
10
2000
C _iss
1500
1000
500
C_rss
0
0
4
C _oss
8
12
16
20
V_DS - Drain-Source Voltage (V)
Capacitance
5
ID = 1 A
4
3
2
V_DS = 10 V
V_DS = 16 V
1
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
1
TA = 150 °C
0.1
T_A = 25 °C
0.01
0.2
0.12
0.10
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp.
I_D = 1 A
0.08
0.06
T_A = 125 °C
0.04
0.02
0
T_A = 25 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
R_DS(on) vs. V_GS vs Temperature
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4
Document Number: 73559
S-82119-Rev. D, 08-Sep-08