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SI8424DB Datasheet, PDF (5/11 Pages) Vishay Siliconix – N-Channel 1.2-V (G-S) MOSFET
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TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.8
80
0.7
ID = 250 µA
60
0.6
0.5
40
Si8424DB
Vishay Siliconix
0.4
20
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
14
12
10
8
6
4
2
0
0
25
50
75
100 125 150
TF - Foot Temperature (°C)
Current Derating**
100
Limited by RDS(on)*
10
1
0.1
P(t) = 100 ms
P(t) = 1s
P(t) = 10s
DC
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
8
7
6
5
4
3
2
1
0
0
25
50
75
100 125 150
Case Temperature (°C)
Power Derating
0.01
TA = 25 °C
Single Pulse
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
** The power dissipation PD is based on TJ(max) = 150 °C,
using junction-to-foot thermal resistance, and is more useful
in settling the upper dissipation limit for cases where
additional heatsinking is used. It is used to determine the
current rating, when this rating falls below the package limit.
Document Number: 74400
S-82119-Rev. B, 08-Sep-08
www.vishay.com
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