SI8424DB Datasheet, PDF (2/11 Pages) Vishay Siliconix – N-Channel 1.2-V (G-S) MOSFET

Si8424DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a,b
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 72 °C/W.
Symbol
R_thJA
R_thJF
Typical
35
16
Maximum
45
20
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_GSS
I_DSS
I_D(on)
Drain-Source On-State
Resistance^a
R_DS(on)
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
g_fs
C_iss
C_oss
C_rss
Q_g
V_DS = 0 V, V_GS = 5 V
V_DS = 8 V, V_GS = 0 V
V_DS = 8 V, V_GS = 0 V , T_J = 70 °C
V_DS ≤ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 1 A
V_GS = 2.5 V, I_D = 1 A
V_GS = 1.8 V, I_D = 1 A
V_GS = 1.5 V, I_D = 1 A
V_GS = 1.2 V, I_D = 1 A
V_DS = 4 V, I_D = 1 A
V_DS = 4 V, V_GS = 0 V, f = 1 MHz
V_DS = 4 V, V_GS = 5 V, I_D = 1 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DS = 4 V, V_GS = 4.5 V, I_D = 1 A
V_GS = 0.1 V, f = 1 MHz
V_DD = 4 V, R_L = 4 Ω
I_D ≅ 1 A, V_GEN = – 4.5 V, R_g = 1 Ω
Min.
8
0.35
20
Typ.
8.9
- 2.5
0.025
0.027
0.029
0.032
0.049
8.3
1950
610
350
22
20
3.5
1.8
13
8
12
110
40
Max.
Unit
1.0
100
1
10
0.031
0.033
0.035
0.043
0.077
13
V
mV/°C
V
nA
µA
A
Ω
S
pF
33
30
nC
Ω
12
18
ns
165
60
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Document Number: 74400
S-82119-Rev. B, 08-Sep-08