SI8424DB Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 1.2-V (G-S) MOSFET

N-Channel 1.2-V (G-S) MOSFET
Si8424DB
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.031 at V_GS = 4.5 V
0.033 at V_GS = 2.5 V
8
0.035 at V_GS = 1.8 V
0.043 at V_GS = 1.5 V
0.077 at V_GS = 1.2 V
I_D (A)^a
12.2
11.6
11.2
10.2
1.3
Q_g (Typ.)
20 nC
MICRO FOOT
Bump Side View
Backside View
FEATURES
• TrenchFET^® Power MOSFET
• Industry First 1.2 V Rated MOSFET
• Ultra Small MICRO FOOT^® Chipscale
Packaging Reduces Footprint Area, Profile
RoHS
COMPLIANT
(0.62 mm) and On-Resistance Per Footprint Area
APPLICATIONS
• Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
• Ultra Low Voltage Load Switch
D
3
2
D
D
8424
G
XXX
Device Marking: 8424
xxx = Date/Lot Traceability Code
S
4
G
1
Ordering Information: Si8424DB-T1-E1 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
8
V
V_GS
±5
T_C = 25 °C
12.2
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
9.8
8.1^b,c
T_A = 70 °C
6.5^b,c
A
Pulsed Drain Current
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
5.2
2.3^b,c
T_C = 25 °C
6.25
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
4
2.78^b,c
W
T_A = 70 °C
1.78^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Package Reflow Conditions^d
IR/Convection
260
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 74400
S-82119-Rev. B, 08-Sep-08
www.vishay.com
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