SI8424DB Datasheet, PDF (4/11 Pages) Vishay Siliconix – N-Channel 1.2-V (G-S) MOSFET

Si8424DB
Vishay Siliconix
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
0.12
3000
0.09
0.06
0.03
V_GS = 1.2 V
V_GS = 1.5 V
V_GS = 2.5 V
V_GS = 1.8 V
0.00
0
V_GS = 4.5 V
5
10
15
20
I_D - Drain Current (A)
R_DS(on) vs. Drain Current
5
I_D = 1 A
4
V_DS = 4 V
3
V_DS = 6.4 V
2
1
0
0
10.00
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
T_A = 150 °C
1.00
T_A = 25 °C
0.10
0.01
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs Temp
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4
2400
C_iss
1800
1200
600
C_oss
C_rss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 1 A
1.3
V_GS = 4.5 V, 2.5 V, 1.8 V
1.1
V_GS = 1.5 V
0.9
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.050
0.045
I_D = 1 A
0.040
0.035
0.030
T_A = 125 °C
0.025
T_A = 25 °C
0.020
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
R_DS(on) vs V_GS vs Temperature
Document Number: 74400
S-82119-Rev. B, 08-Sep-08