SI8424DB Datasheet, PDF (3/11 Pages) Vishay Siliconix – N-Channel 1.2-V (G-S) MOSFET

Si8424DB
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
T_C = 25 °C
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
I_S = 1 A, V_GS = 0 V
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = – 1 A, dI/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
6.25
A
20
0.6
1.2
V
104
156
ns
88
132
nC
26
ns
78
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
20
20
V_GS = 5 thru 1.5 V
15
15
10
5
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
5
0
0.0
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
1.8
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 74400
S-82119-Rev. B, 08-Sep-08
www.vishay.com
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