SI7703EDN_08 Datasheet, PDF (5/13 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si7703EDN
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
2
Notes:
P _DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 75 °C/W
3. T _JM - T_A = P_DMZ_thJA(t ⁾
4. Surface Mounted
10^-3
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
SCHOTTKY TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
20
5
10
1
0.1
20 V
0.01
10 V
T_J = 150 °C
1
0.001
1
T_J = 25 °C
0.0001
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.1
0
0.2
0.4
0.6
0.8
1.0
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
www.vishay.com
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