SI7703EDN_08 Datasheet, PDF (2/13 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7703EDN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
Junction-to-Ambient^a
t ≤ 10 s
Steady State
MOSFET
Schottky
MOSFET
Schottky
Junction-to-Case (Drain)
Steady State
MOSFET
Schottky
Notes
a. Surface Mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJC
Typical
35
51
75
91
4
10
Maximum
44
64
94
115
5
12
Unit
°C/W
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 800 µA
- 0.45
- 1.0
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = 0 V, V_GS = ± 12 V
± 1.5
µA
± 100
mA
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V, T_J = 85 °C
-1
µA
-5
On-State Drain Current^a
I_D(on)
V_DS ≤ - 5 V, V_GS = - 4.5 V
- 20
A
V_GS = - 4.5 V, I_D = - 6.3 A
0.041
0.048
Drain-Source On-State Resistance^{a R}DS(on)
V_GS = - 2.5 V, I_D = - 5.3 A
0.057
0.068
Ω
V_GS = - 1.8 V, I_D = - 1 A
0.072
0.090
Forward Transconductance^a
g_fs
V_DS = - 10 V, I_D = - 6.3 A
14
S
Diode Forward Voltage^a
V_SD
I_S = - 2.3 A, V_GS = 0 V
- 0.8
- 1.2
V
Dynamic^b
Total Gate Charge
Q_g
12
18
Gate-Source Charge
Q_gs
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 6.3 A
2.5
nC
Gate-Drain Charge
Q_gd
2.9
Turn-On Delay Time
t_d(on)
2.5
4
Rise Time
Turn-Off DelayTime
t_r
t_d(off)
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_G = 6 Ω
4
6
νs
15
23
Fall Time
t_f
12
18
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
V_F
I_F = 0.5 A
I_F = 0.5 A, T_J = 125 °C
0.42
0.48
V
0.33
0.4
V_r = 20 V
0.002
0.100
Maximum Reverse Leakage Current
I_rm
V_r = 20 V, T_J = 85 °C
0.10
1
mA
V_r = 20 V, T_J = 125 °C
1.5
10
Junction Capacitance
C_T
V_r = 10 V
31
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71429
S-83043-Rev. C, 22-Dec-08