SI7703EDN_08 Datasheet, PDF (3/13 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
8
10000
1000
6
100
10
T_J = 150 °C
4
1
2
0
0
4
8
12
16
V_GS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
0.1
0.01
T_J = 25 °C
0.001
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
20
V_GS = 5 thru 2.5 V
16
20
T_C = - 55 °C
16
25 °C
125 °C
12
2V
12
8
8
1.5 V
4
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.15
0.12
V_GS = 1.8 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2000
1600
C _{is s}
0.09
0.06
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1200
800
400
C _{os s}
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
www.vishay.com
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