SI7703EDN_08 Datasheet, PDF (4/13 Pages) Vishay Siliconix – Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
5
1.5
V_DS = 10 V
4
I_D = 6.3 A
V_GS = 4.5 V
I_D = 6.3 A
1.3
3
1.1
2
0.9
1
0
0
2
4
6
8
10 12 14
Q_g - Total Gate Charge (nC)
Gate Charge
20
10
T_J = 150 °C
T_J = 25 °C
1
0
0.3
0.6 0.9
1.2
1.5 1.8
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
I_D = 800 µA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - T emperature (°C)
Threshold Voltage
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.14
0.12
0.10
0.08
0.06
I_D = 6.3 A
0.04
0.02
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001 0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
Document Number: 71429
S-83043-Rev. C, 22-Dec-08