SI7374DP Datasheet, PDF (5/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
60
50
80
40
60
30
40
Limited by Package
20
20
10
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
Si7374DP
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73560
S-83039-Rev. B, 29-Dec-08
www.vishay.com
5