SI7374DP Datasheet, PDF (1/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7374DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0055 at V_GS = 10 V
0.0066 at V_GS = 4.5 V
I_D (A)^a
24
24
Q_g (Typ.)
36 nC
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
V_SD (V)
Diode Forward Voltage
30
0.39 V at 1.0 A
I_F (A)
2.0
PowerPAK SO-8
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• DC/DC Conversion
- CPU Core Low Side
- Secondary Synchronous Rectification
6.15 mm
S
1
S
5.15 mm
2
S
3
G
4
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7374DP-T1-E3 (Lead (Pb)-free)
Si7374DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
30
± 20
24^a
24^a
23.8^{b, c}
19^{b, c}
100
24^a
4.2^{b, c}
56
36
5^{b, c}
3.2^{b, c}
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Case (Drain)
t ≤ 10 s
R_thJA
20
Steady State
R_thJC
1.7
25
°C/W
2.2
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 68 °C/W.
Document Number: 73560
S-83039-Rev. B, 29-Dec-08
www.vishay.com
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