SI7374DP Datasheet, PDF (3/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
5
V_GS = 10 V thru 3 V
V_GS = 4 V
80
4
60
3
40
2
T_C = 125 °C
25 °C
Si7374DP
Vishay Siliconix
20
V_GS = 3 V
0
0.0
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0070
0.0065
0.0060
0.0055
V_GS = 4.5 V
0.0050
0.0045
V_GS = 10 V
0.0040
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 15 V
6
4
V_DS = 24 V
1
- 55 °C
0
1.5
2.0
2.5
3.0
3.5
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
8000
6000
C_iss
4000
2000
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 23.8 A
1.4
V_GS = 10 V
1.2
1.0
2
0.8
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73560
S-83039-Rev. B, 29-Dec-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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