SI7374DP Datasheet, PDF (2/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7374DP
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 1 mA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
Forward Transconductance^a
R_DS(on)
g_fs
V_GS = 10 V, I_D = 23.8 A
V_GS = 4.5 V, I_D = 21.8 A
V_DS = 15 V, I_D = 23.8 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 20 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Current
Pulse Forward Diode Current
Forward Voltage Drop (Schottky Diode)
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
I_S
I_SM
V_F
Maximal Reverse Leakage Current
(Schottky Diode)
I_rm
Junction Capacitance (Schottky Diode)
C_T
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 20 A
f = 1 MHz
V_DD = 15 V, R_L = 1.5 Ω
I_D ≅ 10 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 15 V, R_L = 1.5 Ω
I_D ≅ 10 A, V_GEN = 10 V, R_g = 1 Ω
T_C = 25 °C
I_F = 1 A
I_F = 1 A, T_J = 150 °C
V_r = 30 V
V_r = 30 V, T_J = 100 °C
V_r = 30 V, T_J = 125 °C
V_r = 10 V
I_F = 10 A, dI/dt = 100 A/µs, T_J = 25 °C
Min.
30
1.5
50
Typ. Max.
2.8
± 100
500
10
0.0046
0.0055
95
0.0055
0.0066
5500
870
360
81
122
38
57
18
11
0.95
1.4
40
60
160
240
30
45
10
15
15
25
15
25
42
65
10
15
24
100
0.35 0.39
0.27 0.31
0.07
0.5
3.5
10
10
100
58
45
70
39
60
20
25
Unit
V
V
nA
µA
mA
A
Ω
S
pF
nC
Ω
ns
A
V
mA
pF
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73560
S-83039-Rev. B, 29-Dec-08