SI7374DP Datasheet, PDF (4/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7374DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.022
0.018
I_D = 23.8 A
T_J = 150 °C
T_J = 25 °C
10
0.014
0.010
125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100.000
10.000
1.000
V_DS = 30 V
0.006
25 °C
0.002
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
0.100
V_DS = 24 V
20
0.010
10
0.001
0
25
50
75
100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R _DS(on)*
0
0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T_A = 25 °C
BVDSS Limited
DC
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73560
S-83039-Rev. B, 29-Dec-08