SI6862DQ Datasheet, PDF (5/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Current Sense

New Product
Si6862DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SENSE DIE
On-Resistance vs. Sense Current
12
On-Resistance vs. Gate-to-Source Sense Voltage
25
9
V_GS = 2.5 V
6
3
V_GS = 4.5 V
20
I_SENSE = 10 mA
15
10
5
0
0
0.02
0.04
0.06
0.08
0.10
I_SENSE – Sense Current (A)
1000
800
Current Ratio (I_MAIN/I_S) vs. Gate Voltage
(Channel-1)
R_S = 17.97 W
14.96 W
9.97 W
600
400
4.73 W
1.06 W
200
0
0
3
6
9
12
V_G (V)
0
0
1
2
3
4
5
V_GSS – Gate-to-Source Sense Voltage (V)
2500
2000
1500
Current Ratio (I_MAIN/I_S) vs. Gate Voltage
(Channel-2)
R_S = 14.96 W
9.97 W
1000
500
0
0
4.73 W
1.06 W
Kelvin and Source Pins Are Separated
3
6
9
12
V_G (V)
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
www.vishay.com S FaxBack 408-970-5600
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