SI6862DQ Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Current Sense

Si6862DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 5.2 A
V_GS = 2.5 V, I_D = 4.4 A
V_DS = 10 V, I_D = 5.2 A
I_S = 0.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 10 V, V_GS = 4.5 V, I_D = 5.2 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 0.9 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.6
V
"100
nA
1
mA
5
30
A
0.022
0.026
W
0.029
0.036
23
S
0.8
1.2
V
25
40
3.7
nC
8.1
25
50
40
80
80
160
ns
45
90
40
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
V_GS = 5 thru 3 V
24
Output Characteristics
2.5 V
18
2V
12
6
1V
1.5 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS – Drain-to-Source Voltage (V)
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2-2
Transfer Characteristics
30
T_C = –55_C
24
25_C
18
125_C
12
6
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 71145
S-00717—Rev. B, 03-Apr-00