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SI6862DQ Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Current Sense
New Product
Si6862DQ
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET with Current Sense
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.026 @ VGS = 4.5 V
0.036 @ VGS = 2.5 V
ID (A)
6.6
5.6
TSSOP-8
D1D
S1 2
SENSE1 3
Si6862DQ
G4
Top View
8D
7 S2
6 SENSE2
5 KELVIN
S1
SENSE1
D
KELVIN
S2
SENSE2
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
6.6
5.2
5.2
4.2
30
1.5
0.9
1.8
1.1
1.1
0.7
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
55
93
36
Maximum
70
110
45
Unit
_C/W
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