SI6862DQ Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Current Sense

New Product
Si6862DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
2500
Capacitance
0.05
0.04
0.03
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
2000
C_iss
1500
1000
500
C_rss
C_oss
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 5.2 A
4
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.2 A
1.4
3
1.2
2
1.0
1
0.8
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
I_D = 5.2 A
0.04
0.03
0.02
0.01
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
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