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SI6862DQ Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Current Sense
Si6862DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Junction-to-Ambient
30
25
0.2
ID = 250 mA
20
–0.0
15
–0.2
10
–0.4
5
–0.6
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
10–2
10–1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 93_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
www.vishay.com S FaxBack 408-970-5600
2-4
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71145
S-00717—Rev. B, 03-Apr-00