SI5411EDU Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si5411EDU
Vishay Siliconix
1000
100
Limited by R_DS(on)*
100 µs
10
1
0.1 ^TA ^{= 25 °C}
1 ms
10 ms
100 ms
10 s
1s
DC
0.01
0.1
BVDSS Limited
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
60
35
30
50
25
40
20
30
Package Limited
15
20
10
10
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Current Derating*
Power Derating






* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1662-Rev. A, 29-Jul-13
5
Document Number: 62879
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