SI5411EDU Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
0.050
Si5411EDU
Vishay Siliconix
6
I_D = 15 A
V_DS = 6 V
V_DS = 3 V
4
V_DS = 9.6 V
2
0
0
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
0.040
I_D = 6 A
0.030
0.020
0.010
T_J = 25 °C
T_J = 125 °C
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.5
1.4
V_GS = 4.5 V; I_D = 6A
1.3
V_GS = 3.7 V; I_D = 5A
1.2
V_GS = 2.5 V; I_D = 5A
1.1
1.0
V_GS = 1.8 V; I_D = 2 A
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.60
0.55
0.50
0.45
0.40
0.35
I_D = 250 μA
0.30
0.25
0.20
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
50
T_J = 150 °C
40
10
30
T_J = 25 °C
20
1
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Soure-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Ambient
S13-1662-Rev. A, 29-Jul-13
4
Document Number: 62879
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