SI5411EDU Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20.00
20
16.00
16
12.00
T_J = 25 °C
12
8.00
8
4.00
4
0.00
0
4
8
12
16
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
0
0.0
Si5411EDU
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
10^-2
10^-3
10^-4
10^-5
T_J = 150 °C
10^-6
10^-7
T_J = 25 °C
10^-8
10^-9
0
4
8
12
16
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
0.050
0.040
V_GS = 1.8 V
0.030
0.020
0.010
V_GS = 2.5 V
V_GS = 3.7 V
0.000
0
V_GS = 4.5 V
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
100
V_GS = 5 V thru 3 V
80
60
40
V_GS = 2.5 V
V_GS = 2 V
6000
5000
4000
3000
2000
C_iss
C_oss
20
0
0.0
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
1000 ^Crss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
Capacitance
S13-1662-Rev. A, 29-Jul-13
3
Document Number: 62879
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000