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SI4955DY Datasheet, PDF (5/8 Pages) Vishay Siliconix – Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
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Si4955DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
CHANNEL 1
0.2
0.1
0.1
0.05
0.02
0.01
10−4
2
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 5 thru 2 V
16
16
1
10
CHANNEL 2
Transfer Characteristics
12
1.5 V
8
4
1V
0
0
1
2
3
4
5
VDS − Drain-to-Source Voltage (V)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
12
8
TC = 125_C
4
25_C
−55_C
0
0.0
0.4
0.8
1.2
1.6
2.0
VGS − Gate-to-Source Voltage (V)
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