SI4955DY Datasheet, PDF (1/8 Pages) Vishay Siliconix – Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

New Product
Si4955DY
Vishay Siliconix
Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
PRODUCT SUMMARY
V_DS (V)
Channel-1
−30
Channel-2
−20
r_DS(on) (W)
0.054 @ V_GS = −10 V
0.100 @ V_GS = −4.5 V
0.027 @ V_GS = −4.5 V
0.035 @ V_GS = −2.5 V
0.048 @ V_GS = −1.8 V
I_D (A)
−5.0
−3.7
−7.0
−6.2
−5.2
FEATURES
D TrenchFETr Power MOSFETs
D Low Gate Drive (2.5 V) Capability For
Channel 2
APPLICATIONS
D Game Station
− Load Switch
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
S₁
G₁
Ordering Information: Si4955DY—E3
Si4955DY-T1—E3 (with Tape and Reel)
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−30
−20
"20
"8
−5.0
−3.8
−7.0
−5.3
−4.0
−3.0
−5.6
−4.2
−20
−1.7
−0.9
−1.7
−0.9
2.0
1.1
2
1.1
1.3
0.7
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
Symbol
R_thJA
R_thJF
Channel-1
Typ
Max
55
62.5
90
110
33
40
Channel-2
Typ
Max
58
62.5
91
110
34
40
Unit
_C/W
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