SI4955DY Datasheet, PDF (3/8 Pages) Vishay Siliconix – Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

New Product
Si4955DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10 thru 5 V
16
16
CHANNEL 1
Transfer Characteristics
12
4V
8
4
0
0
0.20
3V
1
2
3
4
5
6
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
12
8
4
0
0
1000
T_C = 125_C
25_C
−55_C
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Capacitance
0.16
0.12
0.08
V_GS = 4.5 V
0.04
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
10
V_DS = 15 V
I_D = 5.0 V
8
Gate Charge
800
C_iss
600
400
C_oss
200
C_rss
0
0
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 5.0 V
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10 12 14
Q_g − Total Gate Charge (nC)
0.6
−50 −25
0 25 50 75 100 125 150
T_J − Junction Temperature (_C)
Document Number: 72241
S-32411—Rev. B, 24-Nov-03
www.vishay.com
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