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SI4955DY Datasheet, PDF (2/8 Pages) Vishay Siliconix – Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
Si4955DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = −250 mA
VDS = VGS, ID = −250 mA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "8 V
VDS = −24 V, VGS = 0 V
VDS = −16 V, VGS = 0 V
VDS = −24 V, VGS = 0 V, TJ = 85_C
VDS = −16 V, VGS = 0 V, TJ = 85_C
VDS w −5 V, VGS = −10 V
VDS p −5 V, VGS = −10 V
VGS = −10 V, ID = −5.0 A
VGS = −4.5 V, ID = −7.0 A
VGS = −4.5 V, ID = −3.7 A
VGS = −2.5 V, ID = −6.2 A
VGS = −1.8 V, ID = −3 A
VDS = −15 V, ID = −5.0 A
VDS = −15 V, ID = −3 A
IS = −1.7 A, VGS = 0 V
IS = −1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Channel-1
VDS = −15 V, VGS = −10 V, ID = −5.0 A
Qgs
Channel-2
VDS = −10 V, VGS = −4.5 V, ID = −7 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Channel-1
VDD = −15 V, RL = −15 W
ID ^ −1 A, VGEN = −10 V, RG = 6 W
Channel-2
VDD = −10 V, RL = 10 W
ID ^ −1 A, VGEN = −4.5 V, RG = 6 W
IF = −1.7 A, di/dt = 100 A/ms
IF = −1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
Ch 1
Ch 2
−1.0
−0.4
−3
V
−1
Ch 1
Ch 2
"100
nA
"100
Ch 1
−1
Ch 2
Ch 1
−1
mA
−5
Ch 2
−5
Ch 1
−20
A
Ch 2
−20
Ch 1
0.044 0.054
Ch 2
0.022 0.027
Ch 1
0.082 0.100
W
Ch 2
0.029 0.035
Ch 2
0.039 0.048
Ch 1
10
S
Ch 2
25
Ch 1
Ch 2
−0.80 −1.2
V
−0.80 −1.2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
12.5
19
21
25
2.1
nC
2.6
3.5
6.0
7
15
20
30
10
15
40
60
30
45
ns
125
190
22
35
85
130
25
60
64
90
www.vishay.com
2
Document Number: 72241
S-32411—Rev. B, 24-Nov-03