SI4955DY Datasheet, PDF (4/8 Pages) Vishay Siliconix – Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

Si4955DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
0.20
T_J = 150_C
0.16
10
0.12
CHANNEL 1
On-Resistance vs. Gate-to-Source Voltage
I_D = 2 A
I_D = 5 A
0.08
T_J = 25_C
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.00
0
30
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power
0.4
25
I_D = 250 mA
20
0.2
0.0
−0.2
−0.4
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
15
10
5
0
10^−3
10^−2
10^−1
1
10
Time (sec)
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
P(t) = 0.0001
10
1
I_D(on)
Limited
0.1
0.01
0.1
T_A = 25_C
Single Pulse
BV_DSS Limited
1
10
V_DS − Drain-to-Source Voltage (V)
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
100 600
www.vishay.com
4
Document Number: 72241
S-32411—Rev. B, 24-Nov-03