SI4908DY Datasheet, PDF (5/7 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
6
5
4
3
2
1
0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
Si4908DY
Vishay Siliconix
Power De-Rating, Junction-to-Foot
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
Power De-Rating, Junction-to-Ambient
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
*The power dissipation P_b is based on T_J(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
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