SI4908DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si4908DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
On-Resistance vs. Gate-to-Source Voltage
0.25
I_D = 5 A
0.20
T_J = 150 _C
1
0.15
T_J = 25 _C
0.1
0.01
0.00
0.2
0.4
0.6
0.8
1.0 1.2
V_SD – Source-to-Drain Voltage (V)
0.10
T_A = 125 _C
0.05
T_A = 25 _C
0.00
2
3
4
5
6
7
8
9 10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
–0.0
–0.2
I_D = 5 mA
–0.4
–0.6
I_D = 250 mA
Single Pulse Power, Junction-to-Ambient
50
40
30
20
10
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
*Limited by r_DS(on)
10
www.vishay.com
4
1
1 ms
10 ms
0.1
T_A = 25 _C
Single Pulse
100 ms
1s
10 s
dc
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Document Number: 73698
S–60218—Rev. A, 20-Feb-06