SI4908DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

New Product
Si4908DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
40
r_DS(on) (W)
0.060 at V_GS = 10 V
0.070 at V_GS = 4.5 V
I_D (A)^a
5.0
4.7
Q_g (Typ)
5.6
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4908DY-T1–E3 (Lead (Pb)–free)
FEATURES
D TrenchFETr Power MOSFET
D 100 % R_g Tested
APPLICATIONS
D CCFL Inverter
D₁
RoHS
COMPLIANT
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 _C)
Pulsed Drain Current (10 ms Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 _C
T_C = 70 _C
T_A = 25 _C
T_A = 70 _C
T_C = 25 _C
T_A = 25 _C
L = 0.1 mH
T_C= 25 _C
T_C= 70 _C
T_A = 25 _C
T_A = 70 _C
V_DS
V_GS
I_D
I_DM
I_S
I_SM
I_AS
E_AS
P_D
T_J, T_stg
40
"16
5
4.7
4.1^{b, c}
3.3^{b, c}
20
2.3
1.5^{b, c}
20
7
2.5
2.75
1.75
1.85^{b, c}
1.18^{b, c}
–55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady-State
Notes
a. Based on T_C = 25 _C.
b. Surface Mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 120 _C/W.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
Symbol
R_thJA
R_thJF
Typ
57
35
Max
67.5
45
Unit
_C/W
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