SI4908DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

New Product
Si4908DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
20
V_GS = 10 thru 4 V
16
12
3V
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS – Drain-to-Source Voltage (V)
Transfer Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
T_C = 125 _C
25 _C
–55 _C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.08
0.07
0.06
0.05
V_GS = 4.5 V
V_GS = 10 V
0.04
0.03
0
4
8
12
16
20
I_D – Drain Current (A)
550
500
450
400
350
300
250
200
150
100
50
0
0
Capacitance
C_iss
C_rss
C_oss
8
16
24
32
40
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
On-Resistance vs. Junction Temperature
2.1
I_D = 5 A
1.8
V_GS = 4.5 V
1.5
V_GS = 10 V
1.2
2
0.9
0
0.0
2.5
5.0
7.5
10.0
12.5
Q_g – Total Gate Charge (nC)
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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