SI4908DY Datasheet, PDF (2/7 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si4908DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_DS
DV_DS/T_J
DV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
I_D = 250 mA
I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "16 V
V_DS = 40 V, V_GS = 0 V
V_DS = 40 V, V_GS = 0 V, T_J = 55 _C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.1 A
V_GS = 4.5 V, I_D = 3.8 A
V_DS = 15 V, I_D = 4.1 A
Min Typ^a Max Unit
40
40
V
–4.6
0.8
2.2
100
nA
1
mA
10
20
A
0.048 0.060
W
0.056 0.070
15
S
Input Capacitance
C_iss
355
Output Capacitance
Reverse Transfer Capacitance
C_oss
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t_d(on)
t_r
t_d(off)
Fall Time
t_f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
N-Channel
V_DS = 20 V, V_GS = 0 V, f = 1 MHz
V_DS = 20 V, V_GS = 10 V, I_D = 5 A
N-Channel
V_DS = 20 V, V_GS = 4.5 V, I_D = 5 A
f = 1 MHz
N-Channel
V_DD = 20 V, R_L = 4 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 1 W
N-Channel
V_DD = 20 V, R_L = 4 W
I_D ^ 1 A, V_GEN = 4.5 V, R_g = 1 W
T_C = 25 _C
I_S = 1.5 A
N-Channel
I_F = 2 A, di/dt = 100 A/ms, T_J = 25 _C
50
pF
29
8
12
3.7
6
nC
1.1
1.4
3.4
5.2
W
8
13
20
30
23
35
27
42
ns
74
110
95
145
31
48
33
50
2.3
A
20
0.8
1.2
V
26
40
ns
26
40
nC
13
ns
13
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73698
S–60218—Rev. A, 20-Feb-06