SI4807DY Datasheet, PDF (5/5 Pages) Vishay Siliconix – P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET

Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V_G1 = 0 V, 25_C UNLESS NOTED)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
10
Output Characteristics
V_G2S = 10 V
3, 2, 1 V
9V
8V
7V
6V
5V
4V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Drain Current
10
8
6
4
V_G2S = 4.5 V
2
V_G2S = 10 V
0
0
0.2
0.4
0.6
0.8
1.0
I_D – Drain Current (A)
On-Resistance vs. Gate-to-Source Voltage
10
8
8
V_DS = 15 V
I_D = 150 mA
6
6
4
4
I_D = 150 mA
2
2
0
0
0.4
0.8
1.2
1.6
2.0
Q_g – Total Gate Charge (nC)
0
0
2
4
6
8
10
V_G2S – Gate-to-Source Voltage (V)
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-5