SI4807DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET

Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V_G1 = V_G2, 25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 10, 9, 8, 7, 6, 5 V
25
Transfer Characteristics
30
25
20
20
4V
15
15
10
5
0
0
0.15
2, 1 V
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.12
0.09
0.06
0.03
V_GS = 4.5 V
V_GS = 10 V
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 6 A
8
6
4
2
0
0
5
10 15 20 25 30 35
Q_g – Total Gate Charge (nC)
10
5
0
0
T_C = 125_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
3500
Capacitance
3000
C_iss
2500
2000
1500
1000
500
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_G1S = 10 V
1.6 ID = 6 A
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
T_J – Junction Temperature (_C)
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
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