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SI4807DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET | |||
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Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (VG1 = VG2, 25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.15
10
TJ = 150_C
TJ = 25_C
0.12
0.09
0.06
ID = 6 A
0.03
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD â Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Threshold Voltage
0.8
0.6
ID = 250 mA
0.4
0.2
â0.0
â0.2
â0.4
Single Pulse Power
60
TC = 25_C
50
Single Pulse
40
30
20
10
â0.6
â50
0
50
100
150
TJ â Temperature (_C)
0
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70643
S-00652âRev. E, 27-Mar-00
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