SI4807DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET

Si4807DY
Vishay Siliconix
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
Gate 1
–30
Gate 2
r_DS(ON) (W)
0.035 @ V_GS = –10 V
0.054 @ V_GS = –4.5 V
1.3 @ V_GS = –10 V
2.2 @ V_GS = –4.5 V
I_D (A)
"6
"4.8
"0.9
"0.7
D
G_{2 1}
G_{1 2}
S3
S4
SO-8
Top View
8 ^NC
7D
6D
5D
G₂
G₁
S
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Gate 1
Gate 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–30
"20
"6
"0.9
"4.8
"0.7
"30
"1.5
–1.25
2.3
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
Symbol
R_thJA
Limit
55
Unit
_C/W
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