SI4559EY Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175°C MOSFET

Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
20
V_GS = 10, 9, 8, 7, 6 V
24
16
5V
18
12
PĆCHANNEL
Transfer Characteristics
T_C = –55_C
150_C
25_C
12
6
0
0
1.0
4V
3V
1
2
3
4
5
6
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.8
0.6
0.4
V_GS = 4.5 V
0.2
V_GS = 10 V
0
0
4
8
12
16
20
I_D – Drain Current (A)
10
V_DS = 30 V
I_D = 3.1 A
8
Gate Charge
8
4
0
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
1400
Capacitance
1200
C_iss
1000
800
600
400
C_oss
200
C_rss
0
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 3.1 A
1.6
6
1.2
4
0.8
2
0.4
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Document Number: 70167
S-57253—Rev. D, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
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