SI4559EY Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175°C MOSFET

Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 5 V
24
24
4V
18
18
NĆCHANNEL
Transfer Characteristics
T_C = –55_C
25_C
150_C
12
12
6
0
0
0.150
2, 1 V
3V
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.125
0.100
0.075
0.050
0.025
V_GS = 4.5 V
V_GS = 10 V
0
0
6
12
18
24
30
I_D – Drain Current (A)
10
V_DS = 30 V
I_D = 4.5 A
8
Gate Charge
6
4
2
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
6
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
1400
Capacitance
1200
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
12
24
36
48
60
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
V_GS = 10 V
1.9
I_D = 4.5 A
1.6
1.3
1.0
0.7
0.4
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Document Number: 70167
S-57253—Rev. D, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
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