SI4559EY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175°C MOSFET

Si4559EY
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
N-Channel
V_DS (V)
60
P-Channel
–60
r_DS(on) (W)
0.055 @ V_GS = 10 V
0.075 @ V_GS = 4.5 V
0.120 @ V_GS = –10 V
0.150 @ V_GS = –4.5 V
I_D (A)
"4.5
"3.9
"3.1
"2.8
D₁ D₁
S₂
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
G₁
S₁
N-Channel MOSFET
G₂
D₂ D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
60
–60
"20
"20
"4.5
"3.1
"3.8
"2.6
"30
"30
2.0
–2.0
2.4
1.7
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70167
S-57253—Rev. D, 24-Feb-98
Symbol
R_thJA
N- or P- Channel
62.5
Unit
_C/W
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