SI4559EY Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175°C MOSFET

Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
10
0.06
0.04
T_J = 175_C
T_J = 25_C
0.02
I_D = 4.5 A
1
0
0.4
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
50
0.2
40
–0.0
I_D = 250 µA
30
–0.2
–0.4
20
–0.6
10
–0.8
–1.0
–50 –25 0 25 50 75 100 125 150 175
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
10
30
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70167
S-57253—Rev. D, 24-Feb-98