J112-TR1 Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel JFETs

J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
V_DG = 10 V
I_D = 10 mA
T_A = 25_C
b_og
10
g_og
1
0.1
100
200
500
f – Frequency (MHz)
1000
Output Characteristics
40
V_GS(off) = –4 V
32
V_GS = 0 V
24
–0.5
16
8
0
0
–1.0
–1.5
–2.0
–2.5
–3.0
0.2
0.4
0.6
0.8
1.0
V_DS – Drain-Source Voltage (V)
SWITCHING TIME TEST CIRCUIT
J/SST111 J/SST112 J/SST113
V_GS(L)
R_L*
I_D(on)
–12 V
800 W
12 mA
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
–7 V
1600 W
6 mA
–5 V
3200 W
3 mA
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Output Characteristics
100
V_GS(off) = –4 V
80
60
V_GS = 0 V
–0.5
40
–1.0
–1.5
20
–2.0
–2.5
0
0
2
4
6
8
10
V_DS – Drain-Source Voltage (V)
Transfer Characteristics
100
V_GS(off) = –4 V
V_DS = 20 V
80
T_A = –55_C
60
25_C
40
20
125_C
0
0
–1
–2
–3
–4
–5
V_GS – Gate-Source Voltage (V)
V_DD
V_GS(H)
V_GS(L)
V_GS
Scope
R_L
OUT
1 kW 51 W
51 W
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
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