J112-TR1 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel JFETs

J/SST111 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number V_GS(off) (V) r_DS(on) Max (W)
J/SST111
–3 to –10
30
J/SST112
–1 to –5
50
J/SST113
v–3
100
I_D(off) Typ (pA)
5
5
5
t_ON Typ (ns)
4
4
4
J111 SST111
J112 SST112
J113 SST113
FEATURES
D Low On-Resistance: 111 < 30 W
D Fast Switching—t_ON: 4 ns
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-226AA (TO-92)
D
1
S
2
G
3
Top View
J111
J112
J113
TO-236 (SOT-23)
D1
S2
3G
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (¹/₁₆” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
Power Dissipation^a
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
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